Hermetic Silicon Photosensors Selector Guide

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FAQ
Application Note : Design of Fundamental Phototransistor Circuits

  • TO-46  Flat window  UVC sensor

Product Type IC(ON) (μA)
Typ
@ Ee (mW/cm2)
VCE = 5V, 255 nm
Reception angle
@ half intensity (Deg)
Output  
L14U1 100 0.2 80 Phototransistor TO-46 Convex
L14U2 50 0.2 80 Phototransistor

White Paper: Controlling UVC power with the L14U1 Sensor

 

  • TO-46 Convex lens Package

 

Product Type IC(ON) (mA)
min
@ Ee (mW/cm2)
VCE = 5V, 940 nm
Reception angle
@ half intensity (Deg)
Output  
L14T1 16 0.5 14 Phototransistor TO-18 Convex Lens Package
L14D1 6 0.05 8 Photodarlington

  • TO-18 Convex lens Package

 

Product Type IC(ON) (mA)
min
@ Ee (mW/cm2)
VCE = 5V, 940 nm
Reception angle
@ half intensity (Deg)
Output  
BPW36 1.00 0.5 20 Phototransistor TO-18 Convex Lens Package
BPW37 0.50 0.5 20 Phototransistor
L14G1 1.00 0.5 20 Phototransistor
L14G2 0.50 0.5 20 Phototransistor
L14G3 2.00 0.5 20 Phototransistor
L14P1 6.50 0.5 16 Phototransistor
L14P2 13.0 0.5 16 Phototransistor
BPW38 3.00 0.05 16 Photodarlington
L14F1 3.00 0.05 16 Photodarlington
L14F2 1.00 0.05 16 Photodarlington

Product Type
Ee+ (mW/cm2) @880nm
max
VOL (V)
max
Reception angle
@ half intensity (Deg)
Output  
QSA156
0.25
0.4
24
Buffer Totem Pole TO-18 Convex Lens Package
QSA157 0.25 0.4 24 Inverter Totem Pole
QSA158 0.25 0.4 24 Buffer Open Collector
QSA159 0.25 0.4 24 Inverter Open Collector

  • TO-18 Flat lens Package

 

Product Type IC(ON) (mA)
min
@ Ee (mW/cm2)
VCE = 5V, 940 nm
Reception angle
@ half intensity (Deg)
Output  
L14C1 0.16 0.5 80 Phototransistor TO-18 Flat Lens Package
L14C2 0.08 0.5 80 Phototransistor
L14N1 1.00 0.5 80 Phototransistor
L14N2 2.00 0.5 80 Phototransistor